器件建模
安捷伦为直流和射频半导体器件表征及建模提供硬件和软件解决方案。当前大多数领先的半导体制造商和集成器件制造商（IDMs）都采用安捷伦工具来获得器件建模方案，以便用于芯片 CMOS、Bipolar、混合砷化镓（GaAs）、氮化镓（GaN）和许多其它器件技术。
器件建模挑战
- 随着器件几何尺寸越来越小，使用精确模型并控制器件处理性能中的统计变量这种需求显得越来越重要。
- 电路设计人员需要在直流以及射频和微波频率范围内可以精确预测器件行为的模型。
- 不同的处理技术需要大量的可以迅速适应独特程序的模型。
- 建模测量通常耗时数个小时甚至数天，测量控制软件也必须与探测器和仪器协同工作，以便在不同温度条件下执行自动测量。
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Agilent EEsof EDA Newsletter - Product and Application News
Keep tabs on the latest product and application news and review the archives of the Agilent EEsof EDA Newsletter.
内部通讯 2013-05-14 |
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Agilent embraces GaN modeling in IC-CAP upgrade
EETimes Design Article highlights new capabilities in IC-CAP 2013.01.
文章 2013-01-09 |
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Follow Agilent EEsof EDA on Twitter!
Twitter enables you to keep current on news and updates with Agilent EEsof through the exchange of quick, frequent answers to one simple question: What are you doing?
内部通讯 2010-03-04 |
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Future Device Modeling Trends
Modeling the nonlinear device (basic nonlinear component) for circuit and system simulation downstream.
文章 2012-11-28 |
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6.08 MB
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Link Measurements to Nonlinear Bipolar Device Modeling
This Article explains that the dynamic thermal bipolar model can be developed through evaluation of device thermal resistance and capacitance.
文章 1996-02-01 |
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1.58 MB
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Overview: Applying Nonlinear RF Device Modeling to Verify S-Parameter Linearity
This Article is intended to explain the basics of “what’s behind S-parameters” from a modeling engineer's standpoint & on how to apply Harmonic Balance simulators to check the validity of device models.
文章 2001-09-01 |
PDF
460 KB
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RF Device Modeling for Successful High-Frequency Design Challenges
This Article by Joe Civello focuses on challenges associated with creating accurate high-frequency device models; proposes a process for extracting accurate models necessary for successful HF design.
文章 2004-01-01 |
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2.26 MB
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