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請瀏覽產品網頁，以便觀看並尋找在設計週期的四個階段以及執行重要的信號完整度分析所需的解決方案。
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Agilent EEsof EDA Newsletter - Product and Application News
Keep tabs on the latest product and application news and review the archives of the Agilent EEsof EDA Newsletter.
新聞簡訊 2013-05-14 |
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Partner article using ADS: Practical Fiber Weave Effect Modeling -- Lamsim Enterprises, Inc.
Partner article using ADS: Practical Fiber Weave Effect Modeling -- Lamsim Enterprises, Inc.
專文 2011-01-11 |
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Swimming in the channel
Signal-integrity problems can come back to bite you if you're not careful. Specialized software keeps the sharks away. Link to EDN magazine 3/18/2010 to read an article by their Technical Editor.
專文 2010-03-18 |
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Follow Agilent EEsof EDA on Twitter!
Twitter enables you to keep current on news and updates with Agilent EEsof through the exchange of quick, frequent answers to one simple question: What are you doing?
新聞簡訊 2010-03-04 |
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S-parameters Without Tears
This article explains s-parameter theory and shows how to create accurate, delay-causal, and passive time-domain models by combining band-limited s-parameter data with knowledge about the physical characteristics of a component.
期刊 2010-01-25 |
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Practical Analysis of Backplane Vias - White Paper
This paper describes the methodology of using measurements on a test vehicle to build a high bandwidth, scalable model of long vias which includes the through and stub effects which can be used for system simulation.
案例研究 2009-04-20 |
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847 KB
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Signal Integrity Simulation of PCI Express Gen 2 Channel
Article reprint from XrossTalk Magazine, Janurary 2009, author Jason Boh.
專文 2009-03-23 |
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1.81 MB
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Inphi Delivers Memory Interface Chip for DDR3-1600 Using Advanced Design System
This Success Story details how Inphi delivered memory interface chip for DDR3-1600 using Agilent’s Advance Design System (ADS).
案例研究 2009-03-12 |
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196 KB
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Signal Integrity Analysis and Simulation Tools include IBIS Models
This Article describes the types of models that need to be taken together for high-speed signal integrity analysis, and illustrates their use in a simulation of a high-speed memory circuit.
專文 2004-09-01 |
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411 KB
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