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Premier Si/III-V Device Modeling and Characterization Solutions

Agilent provides premier solutions for characterization and modeling of cutting-edge CMOS and compound semiconductor devices. Agilent is the only vendor that provides complete end-to-end modeling solutions, from automated measurements, accurate device model extraction, comprehensive qualification to final process design kit (PDK) validation. Comprehensive modeling services are offered, supported by Agilent’s expert engineers and advanced labs. Some of our key device modeling and characterization EDA software solutions include:

  • IC-CAP: Most powerful III-V/RF modeling platform
  • IC-CAP WaferPro: Fast and accurate automated measurement platform
  • Model Builder Program (MBP): Complete Silicon turnkey device modeling platform
  • Model Quality Assurance (MQA): Industry standard SPICE model signoff and acceptance platform

Device modeling and characterization challenges

  • As device geometries get smaller, the need to use accurate models and to control statistical variations in device processing performance becomes ever more important
  • Circuit designers need models that can accurately predict DC behaviors, as well as RF and noise behaviors
  • Different process technologies require a variety of models that can be quickly adapted to the unique processes
  • With modeling measurements taking hours or even days, measurement control software must also work with probers and instruments to allow automated measurements across temperature

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IC-CAP Device Modeling Software 
Technical overview of Agilent's Integrated Circuit Characterization and Analysis Program (IC-CAP), complete and accurate parameter extraction for semiconductor device modeling

Technical Overview 2012-12-20

Overview on Modeling of a TSOP44 Package 
This Paper presents a step-by-step tutorial based on the IC-CAP model detailing how to model a TSOP44 package using the test fixture.

Technical Overview 2001-09-01

PDF PDF 1.06 MB
Overview on RF Circuits Integration using CMOS SOI 0.25 µm Technology 
This Paper gives a brief overview of the Silicon On Insulator (SOI) technology and also introduces two RF designs performed successfully with 0.25μm SOI technology.

Technical Overview 2002-03-01

PDF PDF 515 KB
Proposed System Solution for 1/f Noise Parameter Extraction 
This paper describes a measurement setup for measuring the 1/f noise of Bipolar and MOS devices.

Technical Overview 2000-12-01

PDF PDF 628 KB