Foundry Partners - Cree, Inc.
Cree Overview Video on YouTube — In this video, Jeremy Fisher, Manager of the MMIC Design and Test Group at Cree, describes what Cree provides for mutual customers of Agilent EEsof EDA and Cree.
GaN MMIC Foundry Services
|Process Name||ADS 2009 PDK||ADS 2011 PDK|
Broadband performance - Enables high power, multi-octave bandwidth amplifiers
Cree’s GaN HEMT MMIC processes are available for MMIC development using full-wafer service (FWS) or a shared multi-project MASK SET (SM) fabrication service. The process features high-power density (4 Watts/mm) transistors, slot vias, high reliability up to 225ºC operating junction temperatures, and scalable unit cells (1 to 8mm/Cell). The value of such MMICs is more power bandwidth and higher efficiency within a smaller footprint compared to other MMIC technologies.
Using Simulation to Optimize the Performance of your Cree Parts
To help designers get the most out of Cree devices, Agilent Technologies has developed a free, downloadable ADS workspace with an instructional Application Note (publication number 5991-4154EN). Several load-pull and DC I-V simulations are included to help you determine ways to optimize and characterize your Cree part.
- Cree Releases Verilog-A RF Device Models to Accelerate GaN Adoption in 4G/LTE Telecom Infrastructure (June 19, 2012)
- Cree Announces Free Process Design Kit Update for Use with Agilent Technologies’ Advanced Design System to Develop GaN-on-SiC HEMT Devices (June 13, 2012)
- Cree Delivers GaN Process Design Kit for Use with Agilent’s Advanced Design System EDA Software—Shortens MMIC Design Cycles (June 13, 2008)
For more information, refer to http://www.cree.com/products/mmic.asp
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