High Power On-Wafer Load Pull Measurements

High Power On-Wafer Load Pull Measurements

Impedance match your High Power Gallium Nitride HFETs with On-Wafer Load Pull Measurements

Impedance matching gallium nitride (GaN) HFETs is essential to ensure that your high-power amplifier designs operate at the highest efficiency. By performing high power, high frequency, on-wafer load pull measurements on your GaN HFETs you can design the optimum impedance matching circuits for your amplifiers.

The bsw OWLP-2 test system combines an Agilent PNA-X network analyzer with tuners from Maury Microwave, high-power amplifiers and a wafer prober from Cascade to create a fully integrated system for on-wafer, high-power load pull measurements of GaN HFETs up to 26.5 GHz. The system can be used to measure S-parameters and intermodulation across the entire frequency range.

The bsw OWLP-2 provides a fully integrated solution that allows you to make on-wafer, high-power load pull and intermodulation measurements. With the OWLP-2 you can achieve high efficiency in your amplifier designs by accurately impedance matching your high power GaN HFETs circuits.

• On-wafer load pull measurements for accurate impedance matching
• Characterizes high-power gallium nitride HFETs
• Optimize the performance of high-power, high-efficiency amplifiers
• Fully integrated solution based on Agilent PNA-X network analyzer
• Combines PNA-X with Maury tuners and Cascade wafer prober
• Test system integration optimizes DUT signal paths
• Measurement & control software provides overall control
• Load pull and intermodulation measurements with same setup

Request more information and Agilent’s partner bsw TestSystems will contact you to discuss your requirements in more detail.