Innovations in EDA: X-Parameter* Case Study: GaN High Power Amplifier (HPA) Design
網路廣播 -- 存檔 | 地點與時間
Why this Webcast is important:
This Webcast illustrates a high power (>45 dBm) amplifier design based on X-parameter measurements of a GaN transistor. A matching circuit is designed and fabricated based on the simulated contours at the source and load fundamental and harmonic frequencies utilizing the X-parameter models of the transistor (without the need for independent harmonic tuning using tuners). The resulting matching circuit cascaded with the transistor is measured and results of the final amplifier are compared against the original X-parameter model. A question and answer session is included in this informative presentation.
Who should view this Webcast:
Engineering Designers, Managers and EDA tool decision makers involved in nonlinear behavioral modeling, GaN device modeling or designing high-power amplifiers for the latest commercial wireless or Aerospace-Defense applications.
The live broadcast is at 10:00 am PACIFIC, 1:00 pm EASTERN, 6:00 pm UTC/GMT
* "X-parameters" is a trademark of Agilent Technologies, Inc. The X-parameter format and underlying equations are open and documented. Here is more information
|免費||At Your PC||View the recording of the Jan 11, 2011 live broadcast|
Webcast Slides: X-Parameter Case Study: GaN High Power Amplifier (HPA) Design
This Webcast illustrates a high power (>45 dBm) amplifier design based on X-parameter measurements of a GaN transistor.
PDF 1.72 MB