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Nonlinear Characterization and Modeling Through Pulsed IV/S-Parameters

1   小時 | 網路廣播 -- 存檔 | 地點與時間

What is the Webcast About?
Amplifier designers have been making use of modern transistor models since their first appearance in the mid-1970s. Models have allowed engineers to create advanced designs with first-pass success without the need for multiple prototypes and design iterations. Compact transistor models, based on measured IV and S-Parameters, allow designers to shift focus from transistor designs to circuit designs. Extracted from quasi-isothermal pulsed IV and pulsed S-Parameter data and validated with load pull characterization, compact transistor models contain a reduced set of parameters. Unlike other model types, compact models take into account complex phenomena such as electro-thermal and trapping effects. For simulations under nonlinear operating conditions, responses to complex modulated signals (such as EVM or ACPR) are accurately predicted as low-frequency and high-frequency memory effects are taken into account. Compact transistor models are ideal for die-level applications, as developing such a model from IV and S-Parameters is straightforward and relatively quick. During this webcast you will learn and see examples of the design flow from Pulsed IV and Pulsed S-Parameters to Compact Transistor Models.

Who Should View this Webcast?
Semiconductor Fabs, Fabless Semiconductor Designers, Transistor Designers, Modeling Engineers, Amplifier Designers, Gallium Nitride (GaN) Users.

地點與時間

費用 地點 詳細資訊
免費 At Your PC Enroll for the Mar 27, 2012 recorded broadcast 

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教育訓練與活動資料

Nonlinear Characterization and Modeling Through Pulsed IV/S-Parameters Webcast Slides 
Slides from the March 27, 2012 Webcast

研討會講義 2012-03-27

PDF PDF 2.16 MB